半导体物理性能手册-第2卷-(下册)

preface
acknowledgments
contents of other volumes
10 wurtzite gallium nitride (a-gan)
  10.1 structural properties 
    10.1.1 ionicity 
    10.1.2 elemental isotopic abundance and molecular weight 
    10.1.3 crystal structure and space group 
    10.1.4 lattice constant and its related parameters 
    10.1.5 structural phase transition 
    10.1.6 cleavage plane 
  10.2 thermal properties 
    10.2.1 melting point and its related parameters 
    10.2.2 specific heat 
    10.2.3 debye temperature 
    10.2.4 thermal expansion coefficient 
    10.2.5 thermal conductivity and diffusivity 
  10.3 elastic properties 
    10.3.1 elastic constant 
    10.3.2 third-order elastic constant 
    10.3.3 young's modulus, poisson's ratio, and similar 
    10.3.4 microhardness 
    10.3.5 sound velocity 
  10.4 phonons and lattice vibronic properties 
    10.4.1 phonon dispersion relation 
    10.4.2 phonon frequency 
    10.4.3 mode gruneisen parameter 
    10.4.4 phonon deformation potential 
  10.5 collective effects and related properties 
    10.5.1 piezoelectric constant 
    10.5.2 frohlich coupling constant 
  10.6 energy-band structure: energy-band gaps 
    10.6.1 basic properties 
    10.6.2 e0-gap region 
    10.6.3 higher-lying direct gap 
    10.6.4 lowest indirect gap 
    10.6.5 conduction-valley energy separation 
    10.6.6 direct-indirect-gap transition pressure 
  10.7 energy-band structure: electron and hole effective masses 
    10.7.1 electron effective mass: f valley 
    10.7.2 electron effective mass: satellite valley 
    10.7.3 hole effective mass 
  10.8 electronic deformation potential 
    10.8.1 intravalley deformation potential: f point 
    10.8.2 intravalley deformation potential: high-symmetry points 
    10.8.3 intervalley deformation potential 
  10.9 electron affinity and schottky barrier height 
    10.9.1 electron affinity 
    10.9.2 schottky barrier height 
  10.10 optical properties 
    10.10.1 summary of optical dispersion relations 
    10.10.2 the reststrahlen region 
    10.10.3 at or near the fundamental absorption edge 
    10.10.4 the interband transition region 
    10.10.5 free-carrierabsorption and related phenomena 
  10.11 elastooptic, electrooptic, and nonlinear optical properties 
    10.11.1 elastooptic effect 
    10.11.2 linear electrooptic constant 
    10.11.3 quadratic electrooptic constant
    10.11.4 franz-keldysh effect 
    10.11.5 nonlinear optical constant 
  10.12 carrier transport properties 
    10.12.1 low-field mobility: electrons 
    10.12.2 low-field mobility: holes 
    10.12.3 high-field transport: electrons 
    10.12.4 high-field transport: holes 
    10.12.5 minority-carrier transport: electrons inp-type materials 
    10.12.6 minority-carrier transport: holes in n-type materials 
    10.12.7 impact ionization coefficient 
11 cubic gallium nitride(b-gan)
12 gallium phosphide(gap)
13 gallium arsenide(gaas)
14 gallium antimonide(gasb)
15 indium nitride(inn)
16 indium phosphide(inp)
17 indium arsendide(inas)
18 indium antimonide(insb)