占新为民 兴材报国:王占国院士文集

目录 序 **篇 自传 幼年时光 3 插曲 7 初入小学 8 远足与讲演 10 夜“逃”红军 11 崭新的小学生活 12 侯集镇的3 年初中生活 14 夜惊 15 雪夜宿房营 16 入伙 18 紧张有趣的课外活动 19 南阳第二高中 20 只身北上南开求学 23 胆战心惊的高等数学课 26 共产主义暑假 27 毛主席视察南开大学 28 3 年困难时期的大学生活 29 早期科研工作概述 33 什刹海黑夜救同事 37 天津小站劳动锻炼 38 1978 年中国物理学会年会趣事 40 变温霍尔系数测量系统建设 41 留学瑞典隆德大学固体物理系 42 1984 年回国后的研究工作 45 第二篇 论著选编 硅的低温电学性质 49 Evidence that the gold donor and acceptor in silicon are two levels of the same defect 57 Optical properties of iron doped AlxGa1-xAs alloys 62 Electronic properties of native deep-level defects in liquid-phase epitaxial GaAs 73 Direct evidence for random-alloy splitting of Cu levels in GaAs1-xPx 89 Acceptor associates and bound excitons in GaAs：Cu 95 Localization of excitons to Cu-related defects in GaAs 116 Direct evidence for the acceptorlike character of the Cu-related C and F bound-exciton centers in GaAs 128 混晶半导体中深能级的展宽及其有关效应 140 Electronic properties of an electron-attractive complex neutral defect in GaAs 151 硅中金施主和受主光电性质的系统研究 158 A novel model of “new donors” in Czochralski-grown silicon 169 Electrical characteristics of GaAs grown from the melt in a reduced-gravity environment 177 SI-GaAs 单晶热稳定性及其电学补偿机理研究 185 Interface roughness scattering in GaAs-AlGaAs modulation-doped heterostructures 195 Simulation of lateral confinement in very narrow channels 201 Theoretical investigation of the dynamic process of the illumination of GaAs 209 Effect of image forces on electrons confined in low-dimensional structures under a magnetic field 222 Photoluminescence studies of single submonolayer InAs structures grown on GaAs(001)matrix 234 Influence of DX centers in the Alx Ga1-x As barrier on the low-temperature density and mobility of the two-dimensional electron gas in GaAs / AlGaAs modulation-doped heterostructure 240 Photoluminescence studies on very high-density quasi-two-dimensional electron gases in pseudomorphic modulation-doped quantum wells 247 Ordering along ？111？ and ？100？ directions in GaInP demonstrated by photoluminescence under hydrostatic pressure 252 Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer 259 Electrical properties of semi-insulating GaAs grown from the melt under microgravity conditions 264 808nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice 269 Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs 275 半导体材料的现状和发展趋势 283 Effects of annealing on self-organized InAs quantum islands on GaAs(100) 285 Wurtzite GaN epitaxial growth on a Si(001)substrate using γ-Al2O3 as an intermediate layer 291 High-density InAs nanowires realized in situ on(100)InP 298 High power continuous-wave operation of self-organized In(Ga)As / GaAs quantum dot lasers 304 Quantum-dot superluminescent diode： A proposal for an ultra-wide output spectrum 306 Optical properties of InAs self-organized quantum dots in n-i-p-i GaAs superlattices 317 High-performance strain-compensated InGaAs / InAlAs quantum cascade lasers 322 Research and development of electronic and optoelectronic materials in China 328 半导体量子点激光器研究进展 339 High-power and long-lifetime InAs / GaAs quantum-dot laser at 1080nm 349 Self-assembled quantum dots， wires and quantum-dot lasers 355 Controllable growth of semiconductor nanometer structures 365 Effect of In0. 2Ga0. 8As and In0. 2Al0. 8As combination layer on band offsets of InAs quantum dots 372 信息功能材料的研究现状和发展趋势 380 High-performance quantum-dot superluminescent diodes 395 Time dependence of wet oxidized AlGaAs / GaAs distributed Bragg reflectors 400 Materials science in semiconductor processing 407 半导体照明将触发照明光源的革命 409 Study of the wetting layer of InAs / GaAs nanorings grown by droplet epitaxy 415 Broadband external cavity tunable quantum dot lasers with low injection current density 422 Experimental investigation of wavelength-selective optical feedback for a high-power quantum dot superluminescent device with two-section structure 432 19μm quantum cascade infrared photodetectors 442 High-performance operation of distributed feedback terahertz quantum cascade lasers 450 Efficacious engineering on charge extraction for realizing highly efficient perovskite solar cells 456 Room temperature continuous wave quantum dot cascade laser emitting at 7.2μm 474 第三篇 学术贡献 忍受辐照伤痛，换来我国空间用硅太阳电池的定型投产 489 挑战国际权威，澄清GaAs 和硅中深能级物理本质 491 “863”十年，掌舵我国新型半导体材料与器件发展 494 任“S-863”专家组长，开展新材料领域战略研究 498 任咨询组组长，为“973”材料领域发展做出重要贡献 499 开拓创新，解决“信息功能材料相关基础问题” 501 推动材料基础研究，实施光电信息功能材料重大研究计划 503 第四篇 回忆 半导体材料科学实验室的筹建与初期发展历程回顾 507 深情厚谊，历久弥坚 509 王占国院士科研事迹回顾 511 一段往事 514 王占国院士支持南昌大学GaN 研究记事 515 我生命中的贵人 517 贺王占国老师80 寿辰 519 往事点滴 521 在王占国导师身边的日子 523 我们的大导师王占国院士 526 我眼中的王占国院士 528 德高望重，仰之弥高 529 超宽禁带半导体材料研究组发展