包邮SOI——纳米技术时代的高端硅基材料

soi——纳米技术时代的高端硅基材料进展
纳米技术时代的高端硅基材料——soi、ssoi和goi
soi技术的发展动态
硅基光电子材料和器件的进展和发展趋势
fabrication of sige-on-insulator and applications for strained si
overview of soi materials technology in china
soi新材料的制备科学
以注氧隔离(simox)技术制备高阻soi材料
硅中注h+引起的缺陷和应力以及剥离的机制
以aln为绝缘埋层的新结构soan材料
多孔硅外延层转移技术制备soi材料
eltran技术制备双埋层soim新结构
soi新结构——soi研究的新动向
fabrication of silicon．on．aln novel structure and its residual strain characterization·
buried tungsten silicide layer in silicon on insulator substrate by smart-cut
void—free low-temperature silicon direct—bonding technique using plasma activation
microstructure and crystallinity of porous silicon and epitaxial silicon layers fabricated on p+porous silicon
formation of silicon-on-diamond by direct bonding of plasma-synthesized diamond-like carbon to silicon
thermal stability of diamondlike carbon buried layer fabricated by plasma immersion ion implantation and deposition in silicon on insulator
study of soi substrates incorporated with buried mosiz layer
soi材料与器件特有的物理效应
s0i mosfet浮体效应研究
soi mosfet的自加热效应研究
s0i器件的辐射效应及其在抗辐射电子学方面的应用进展
evolution of hydrogen and helium co-implanted single-crystal silicon during annealing
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sgoi新结构和应变硅的制备科学
soi技术的若干应用研究