包邮化合物半导体加工中的表征

preface to the reissue of the materials characterization series   
preface to series  
preface to the reissue of characterization of compound
semiconductor processing  
preface  xiii
contributors  xv
characterization of iii-v thin films for electronic devices
  1.1  introduction  
  1.2  surface characterization of gaas wafers  
    dislocations  3,  surface composition and chemical state  
  1.3  ion implantation  
  1.4 epitaxial crystal growth  
  1.5  summary  
ⅲ-v compound semiconductor films foroptical applications
  2.1  introduction  
  2.2  growth rate/layerthickness  
    in situ growth monitors  20,  post-growth structural analysis  
  2.3  composition analysis  
  2.4  impurity and dopant analysis  
  2.5  electrical properties in optical structures  
  2.6  optical properties in single and multilayer structures  
  2.7  interface properties in multilayer structures  
  2.8  summary  
contacts
  3.1  introduction  
  3.2  in situ probes  
    surface preparation and characterization  44,  initial metal deposition  45,
    subsequent metal deposition  
  3.3  unpatterned test structures  
    electrical characterization  48,  concentration profiling  49,
    electron microscopy  
  3.4  patterned test structures  
    barrier height  51,  contact resistance  53,  morphology  
dielectric insulating layers
  4.1  introduction  
  4.2  oxides and oxidation  
  4.3  heteromorphicinsulators  
  4.4  chemical modification of gaas surfaces  
  4.5  indium phosphide-insulator interfaces  
  4.6  heterojunction quasi-insulator interfaces  
  4.7  epitaxial fluoride insulators  
  4.8  commentary  
other compound semiconductor films
  5.1  introduction  
    a focus on hgcdte  83,  objective and scope  84,  background  84,
    representative device structure  
  5.2  substrates and the cdte surface (interface 1)  
    substrate quality  86,  substrate surface preparation  
  5.3  epitaxial hgcdte materials (between interfaces 2 and 5)  
    desired characteristics of the active layers  90,  composition  90,
    crystalline quality  91,  doping  93,  minority carrier lifetime  
  5.4  heterojunction interfaces (interface 3)  
    advantages of the heterojunction  98,  desired characteristics  98,
    characterizations  
  5.5  hgcdte surface preparation (interfaces 4 and 5)  
    importance of the chemically etched surface  100,  monitoring of the surface
    cleanliness by ellipsometry  101,  characterization of thin native oxides on hgcdte by xps  102,  surface analysis by ups  
  5.6  summary  
deep level transient spectroscopy: a case study on gaas
  6.1  introduction  
  6.2  dlts technique: general features  
  6.3  fabrication and qualification of schottky diodes  
  6.4 dlts system  
  6.5  dlts measurement procedure  
  6.6  data analysis  
    dlts spectrum  117,  activation energy for thermal emission  118,
    trap densities  
  6.7  el2 center  
  6.8  summary  
appendix: technique summaries
  1  auger electron spectroscopy (aes)  
  2  ballistic electron emission microscopy (beem)  
  3  capacitance-voltage (c-v) measurements  
  4  deep level transient spectroscopy (dlts)  
  5  dynamic secondary ion mass spectrometry (d-sims)  
  6  electron beam induced current (ebic) microscopy  
  7  energy-dispersive x-ray spectroscopy (eds)  
  8  focused ion beams (fibs)  
  9  fourier transform infrared spectroscopy (ftir)  
  10  hall effect resistivity measurements  
  11  inductively coupled plasma mass spectrometry (icpms)  
  12  light microscopy  
  13  low-energy electron diffraction (leed)  
  14  neutron activation analysis (naa)  
  15  optical scatterometry  
  16  photoluminescence (pl)  
  17  raman spectroscopy  
  18  reflection high-energy electron diffraction (rheed)  
  19  rutherford backscattering spectrometry (rbs)  
  20  scanning electron microscopy (sem)  
  21  scanning transmission electron microscopy (stem)  
  22  scanning tunneling microscopy and scanning force microscopy (stm and sfm)  
  23  sheet resistance and the four point probe  
  24  spreading resistance analysis (sra)  
  25  static secondary ion mass spectrometry (static sims)  
  26  surface roughness: measurement, formation by sputtering, impact on depth profiling  
  27  total reflection x-ray fluorescence analysis (txrf)  
  28  transmission electron microscopy (tem)  
  29  variable-angle spectroscopic ellipsometry (vase)  
  30  x-ray diffraction (xrd)  
  31  x-ray fluorescence (xrf)  
  32  x-ray photoelectron spectroscopy (xps)  
index