半导体物理性能手册-第1卷

preface 
acknowledgments 
contents of other volumes 
1 diamond （c） 
1.1 structural properties 
1.1.1 ionicity 
1.1.2 elemental isotopic abundance and molecular weight 
1.1.3 crystal structure and space group 
1.1.4 lattice constant and its related parameters 
1.1.5 structural phase transition 
1.1.6 cleavage plane 
1.2 thermal properties 
1.2.1 melting point and its related parameters 
1.2.2 specific heat 
1.2.3 debye temperature 
1.2.4 thermal expansion coefficient 
1.2.5 thermal conductivity and diffusivity 
1.3 elastic properties 
1.3.1 elastic constant 
1.3.2 third—order elastic constant 
1.3.3 young's modulus， poisson's ratio， and similar 
1.3.4 microhardness 
1.3.5 sound velocity 
1.4 phonons and lattice vibronic properties 
1.4.1 phonon dispersion relation 
1.4.2 phonon frequency 
1.4.3 mode gruneisen parameter 
1.4.4 phonon deformation potential 
1.5 collective effects and related properties 
1.5.1 piezoelectric constant 
1.5.2 frohlich coupling constant 
1.6 energy—band structure： energy—band gaps 
1.6.1 basic properties 
1.6.2 e0—gap region 
1.6.3 higher—lying direct gap 
1.6.4 lowest indirect gap 
1.6.5 conduction—valley energy separation 
1.6.6 direct—indirect—gap transition pressure 
1.7 energy—band structure： electron and hole effective masses 
1.7.1 electron effective mass： γ valley 
1.7.2 electron effective mass： satellite valley 
1.7.3 hole effective mass 
1.8 electronic deformation potential 
1.8.1 intravalley deformation potential： γ point 
1.8.2 intravalley deformation potential： high—symmetry points 
1.8.3 intervalley deformation potential 
1.9 electron affinity and schottky barrier height 
1.9.1 electron affinity 
1.9.2 schottky barrier height 
1.10 optical properties 
1.10.1 summary of optical dispersion relations 
1.10.2 the reststrahlen region 
1.10.3 at or near the fundamental absorption edge 
1.10.4 the interband transition region 
1.10.5 free—carrier absorption and related phenomena 
1.11 elastooptic， electrooptic， and nonlinear optical properties 
1.11.1 elastooptic effect 
1.11.2 linear electrooptic constant 
1.11.3 quadratic electrooptic constant 
1.11.4 franz—keldysh effect 
1.11.5 nonlinear optical constant 
1.12 carrier transport properties 
1.12.1 low—field mobility： electrons 
1.12.2 low—field mobility： holes 
1.12.3 high—field transport： electrons 
1.12.4 high—field transport： holes 
1.12.5 minority—carrier transport： electrons in ρ—type materials 
1.12.6 minority—carrier transport： holes in n—type materials 
1.12.7 impact ionization coefficient 

2 silicon （si） 
2.1 structural properties 
2.1.1 ionicity 
2.1.2 elemental isotopic abundance and molecular weight 
2.1.3 crystal structure and space group 
2.1.4 lattice constant and its related parameters 
2.1.5 structural phase transition 
2.1.6 cleavage plane 
2.2 thermal properties 
2.2.1 melting point and its related parameters 
2.2.2 specific heat 
2.2.3 debye temperature 
2.2.4 thermal expansion coefficient 
2.2.5 thermal conductivity and diffusivity 
2.3 elastic properties 
2.3.1 elastic constant 
2.3.2 third—order elastic constant 
2.3.3 young's modulus， poisson's ratio， and similar 
2.3.4 microhardness 
2.3.5 sound velocity 
2.4 phonons and lattice vibronic properties 
2.4.1 phonon dispersion relation 
2.4.2 phonon frequency 
2.4.3 mode gruneisen parameter 
2.4.4 phonon deformation potential 
2.5 collective effects and related properties 
2.5.1 piezoelectric constant 
2.5.2 frohlich coupling constant 
2.6 energy—band structure： energy—band gaps 
2.6.1 basic properties 
2.6.2 e0—gap region 
2.6.3 higher—lying direct gap 
2.6.4 lowest indirect gap 
2.6.5 conduction—valley energy separation 
2.6.6 direct—indirect—gap transition pressure 
2.7 energy—band structure： electron and hole effective masses 
2.7.1 electron effective mass： γ valley 
2.7.2 electron effective mass： satellite valley 
2.7.3 hole effective mass 
2.8 electronic deformation potential 
2.8.1 intravalley deformation potential： γ point 
2.8.2 intravalley deformation potential： high—symmetry points 
2.8.3 intervalley deformation potential 
2.9 electron affinity and schottky barrier height 
2.9.1 electron affinity 
2.9.2 schottky barrier height 
2.10 optical properties 
2.10.1 summary of optical dispersion relations 
2.10.2 the reststrahlen region 
2.10.3 at or near the fundamental absorption edge 
2.10.4 the interband transition region 
2.10.5 free—carrier absorption and related phenomena 
2.11 elastooptic， electrooptic， and nonlinear optical properties 
2.11.1 elastooptic effect 
2.11.2 linear electrooptic constant 
2.11.3 quadratic electrooptic constant 
2.11.4 franz—keldysh effect 
2.11.5 nonlinear optical constant 
2.12 carrier transport properties 
2.12.1 low—field mobility： electrons 
2.12.2 low—field mobility： holes 
2.12.3 high—field transport： electrons 
2.12.4 high—field transport： holes 
2.12.5 minority—carrier transport： electrons in p—type materials 
2.12.6 minority—carrier transport： holes in n—type materials 
2.12.7 impact ionization coefficient 

3 germanium （c） 
3.1 structural properties 
3.1.1 ionicity 
3.1.2 elemental isotopic abundance and molecular weight 
3.1.3 crystal structure and space group 
3.1.4 lattice constant and its related parameters 
3.1.5 structural phase transition 
3.1.6 cleavage plane 
3.2 thermal properties 
3.2.1 melting point and its related parameters 
3.2.2 specific heat 
3.2.3 debye temperature 
3.2.4 thermal expansion coefficient 
3.2.5 thermal conductivity and diffusivity 
3.3 elastic properties 
3.3，1 elastic constant 
3.3.2 third—order elastic constant 
3.3.3 young's modulus， poisson's ratio， and similar 
3.3.4 microhardness 
3.3.5 sound velocity 
3.4 phonons and lattice vibronic properties 
3.4.1 phonon dispersion relation 
3.4.2 phonon frequency 
3.4.3 mode gruneisen parameter 
3.4.4 phonon deformation potential 
3.5 collective effects and related properties 
3.5.1 piezoelectric constant 
3.5.2 frohlich coupling constant 
3.6 energy—band structure： energy—band gaps 
3.6.1 basic properties 
3.6.2 eo—gap region 
3.6.3 higher—lying direct gap 
3.6.4 lowest indirect gap 
3.6.5 conduction—valley energy separation 
3.6.6 direct—indirect—gap transition pressure 
3.7 energy—band structure： electron and hole effective masses 
3.7.1 electron effective mass： f valiey 
3.7.2 electron effective mass： satellite valley 
3.7.3 hole effective mass 
3.8 electronic deformation potential 
3.8.1 intravalley deformation potential： γ point 
3.8.2 intravalley deformation potential： high—symmetry points 
3.8.3 intervalley deformation potential 
3.9 electron affinity and schottky barrier height 
3.9.1 electron affinity 
3.9.2 schottky barrier height 
3.10 optical properties 
3.10.1 summary of optical dispersion relations 
3.10.2 the reststrahlen region 
3.10.3 at or near the fundamental absorption edge 
3.10.4 the interband transition region 
3.10.5 free—carrier absorption and related phenomena 
3.11 elastooptic， electrooptic， and nonlinear optical properties 
3.11.1 elastooptic effect 
3.11.2 linear electrooptic constant 
3.11.3 quadratic electrooptic constant 
3.11.4 franz—keldysh effect 
3.11.5 nonlinear optical constant 
3.12 carrier transport properties 
3.12.1 low—field mobility： electrons 
3.12.2 low—field mobility： holes 
3.12.3 high—field transport： electrons 
3.12.4 high—field transport： holes 
3.12.5 minority—carrier transport： electrons in p—type materials 
3.12.6 minority—carrier transport： holes in n—type materials 
3.12.7 impact ionization coefficient 

4 gray tin （a—sn） 
4.1 structural properties 
4.1.1 lonicity 
4.1.2 elemental isotopic abundance and molecular weight 
4.1.3 crystal structure and space group 
4.1.4 lattice constant and its related parameters 
4.1.5 structural phase transition 
4.1.6 cleavage plane 
4.2 thermal properties 
4.2.1 melting point and its related parameters 
4.2.2 specific heat 
4.2.3 debye temperature 
4.2.4 thermal expansion coefficient 
4.2.5 thermal conductivity and diffusivity 
4.3 elastic properties 
4.3.1 elastic constant 
4.3.2 third—order elastic constant 
4.3.3 young's modulus， poisson's ratio， and similar 
4.3.4 microhardness 
4.3.5 sound velocity 
4.4 phonons and lattice vibronic properties 
4.4.1 phonon dispersion relation 
4.4.2 phonon frequency 
4.4.3 mode gruneisen parameter 
4.4.4 phonon deformation potential 
4.5 collective effects and related properties 
4.5.1 piezoelectric constant 
4.5.2 frohlich coupling constant 
4.6 energy—band structure： energy—band gaps 
4.6.1 basic properties 
4.6.2 eo—gap region 
4.6.3 higher—lying direct gap 
4.6.4 lowest indirect gap 
4.6.5 conduction—valley energy separation 
4.6.6 direct—indirect—gap transition pressure 
4.7 energy—band structure： electron and hole effective masses 
4.7.1 electron effective mass： γ valley 
4.7.2 electron effective mass： satellite valley 
4.7.3 hole effective mass 
4.8 electronic deformation potential 
4.8.1 intravalley deformation potential： γ point 
4.8.2 intravalley deformation potential： high—symmetry points 
4.8.3 intervalley deformation potential 
4.9 electron affinity and schottky barrier height 
4.9.1 electron affinity 
4.9.2 schottky barrier height 
4.10 optical properties 
4.10.1 summary of optical dispersion relations 
4.10.2 the reststrahlen region 
4.10.3 at or near the fundamental absorption edge 
4.10.4 the interband transition region 
4.10.5 free—carrier absorption and related phenomena 
4.11 elastooptic， electrooptic， and nonlinear optical properties 
4.11.1 elastooptic effect 
4.11.2 linear electrooptic constant 
4.11.3 quadratic electrooptic constant 
4.11.4 franz—keldysh effect 
4.11.5 nonlinear optical constant 
4.12 carrier transport properties 
4.12.1 low—field mobility： electrons 
4.12.2 low—field mobility： holes 
4.12.3 high—field transport： electrons 
4.12.4 high—field transport： holes 
4.12.5 minority—carrier transport： electrons in p—type materials 
4.12.6 minority—carrier transport： holes in n—type materials 
4.12.7 impact ionization coefficient 
…… 
5 cubic silicon carbide （3c—sic） 
6 hexagonal silicon carbide （2h—， 4h—， 6h—sic， etc.） 
7 rhombohedral silicon carbide （15r—， 21r—， 24r—sic， etc.）