国外电子与通信教材系列集成微电子器件/(英文版)(美)JESUS A. DEL ALAMO

1 Electrons, Photons, and Phonons 电子、光子和声子
1.1 Selected Concepts of Quantum Mechanics 量子力学的基本概念
1.1.1 The dual nature of the photon 光子的二重性
1.1.2 The dual nature of the electron 电子的二重性
1.1.3 Electrons in confined environments 密闭环境中的电子特性
1.2 Selected Concepts of Statistical Mechanics 统计力学的基本概念
1.2.1 Thermal motion and thermal energy 热运动和热能
1.2.2 Thermal equilibrium 热平衡
1.2.3 Electron statistics 电子统计特性
1.3 Selected Concepts of Solid-State Physics 固体物理的基本概念
1.3.1 Bonds and bands 化学键和能带
1.3.2 Metals, insulators, and semiconductors 金属、绝缘体和半导体
1.3.3 Density of states 态密度
1.3.4 Lattice vibrations: phonons 晶格振动：声子
1.4 Summary 小结
1.5 Further reading 延展阅读
Problems 习题
2 Carrier Statistics in Equilibrium 平衡状态下的载流子统计特性
2.1 Conduction and Valence Bands; Bandgap; Holes 导带和价带，带隙，空穴
2.2 Intrinsic Semiconductor 本征半导体
2.3 Extrinsic Semiconductor 非本征半导体
2.3.1 Donors and acceptors 施主和受主
2.3.2 Charge neutrality 电中性特点
2.3.3 Equilibrium carrier concentration in a doped semiconductor 掺杂半导体中的平衡载流子浓度
2.4 Carrier Statistics in Equilibrium 平衡状态下的载流子统计特性
2.4.1 Conduction and valence band density of states 导带和价带的态密度
2.4.2 Equilibrium electron concentration 平衡电子浓度
2.4.3 Equilibrium hole concentration 平衡空穴浓度
2.4.4 np product in equilibrium 平衡状态下的np积
2.4.5 Location of Fermi level 费米能级的位置
2.5 Summary 小结
2.6 Further Reading 延展阅读
AT2.1 Temperature Dependence of the Bandgap 带隙的温度依存性
AT2.2 Selected Properties of the Fermi-Dirac Integral 费米?C狄拉克积分的基本特性
AT2.3 Approximations for Strongly Degenerate Semiconductor 强简并半导体的数学近似
AT2.4 Statistics of Donor and Acceptor Ionization 施主和受主电离的数学统计
AT2.5 Carrier Freeze-Out 载流子束缚态
AT2.6 Heavy-Doping Effects 重掺杂效应
AT2.6.1 The Mott transition Mott转移
AT2.6.2 Bandgap narrowing 带隙变窄
Problems 习题
3 Carrier Generation and Recombination 载流子的产生与复合
3.1 Generation and Recombination Mechanisms 产生与复合机制
3.2 Thermal Equilibrium: Principle of Detailed Balance 热平衡：精细平衡原理
3.3 Generation and Recombination Rates in Thermal Equilibrium 热平衡下的产生率与复合率
3.3.1 Band-to-band optical generation and recombination 带间光产生和光复合
3.3.2 Auger generation and recombination 俄歇产生与复合
3.3.3 Trap-assisted thermal generation and recombination 陷阱辅助的热产生与复合
3.4 Generation and Recombination Rates Outside Equilibrium 非平衡条件下的产生与复合
3.4.1 Quasi-neutral low-level injection; recombination lifetime 准中性低浓度注入，复合寿命
3.4.2 Extraction; generation lifetime 提取和产生寿命
3.5 Dynamics of Excess Carriers in Uniform Situations 均匀条件下的过剩载流子动力学
3.5.1 Example 1: Turn-on transient 例1：开瞬态
3.5.2 Example 2: Turn-off transient 例2：关瞬态
3.5.3 Example 3: A pulse of light 例3：一个光脉冲
3.6 Surface Generation and Recombination 表面产生与复合
3.7 Summary 小结
3.8 Further Reading 延展阅读
AT3.1 Shockley?CRead?CHall Model 肖克利?C里德?C霍尔模型
AT3.1.1 Recombination lifetime 复合寿命
AT3.1.2 Generation lifetime 产生寿命
AT3.2 High-Level Injection 高浓度注入
Problems 习题

4 Carrier Drift and Diffusion 载流子的漂移和扩散
4.1 Thermal Motion 热运动
4.1.1 Thermal velocity 热运动速率
4.1.2 Scattering 散射
4.2 Drift 漂移
4.2.1 Drift velocity 漂移速率
4.2.2 Velocity saturation 速率饱和
4.2.3 Drift current 漂移电流
4.2.4 Energy band diagram under electric field 电场作用下的能带图
4.3 Diffusion 扩散
4.3.1 Fick’s first law 菲克**定律
4.3.2 The Einstein relation 爱因斯坦关系
4.3.3 Diffusion current 扩散电流
4.4 Transit Time 渡越时间
4.5 Nonuniformly Doped Semiconductor in Thermal Equilibrium 热平衡下的非均匀掺杂半导体
4.5.1 Gauss’law 高斯定律
4.5.2 The Boltzmann relations 玻尔兹曼关系
4.5.3 Equilibrium carrier concentration 平衡载流子浓度
4.6 Quasi-Fermi Levels and Quasi-Equilibrium 准费米能级与准平衡态
4.7 Summary 小结
4.8 Further Reading 延展阅读
AT4.1 Selected Properties of the Gamma Function 伽马函数的基本性质
AT4.2 Hot Carrier Effects 热载流子效应
AT4.2.1 Energy relaxation versus momentum relaxation 能量弛豫和动量弛豫
AT4.2.2 Hot-electron transport 热电子输运
AT4.2.3 Impact ionization 碰撞电离
Problems 习题

5 Carrier Flow 载流子运动
5.1 Continuity Equations 连续性方程
5.2 Surface Continuity Equations 表面连续性方程
5.2.1 Free surface 自由表面
5.2.2 Ohmic contact 欧姆接触
5.3 Shockley Equations 肖克利公式
5.4 Simplifications of Shockley Equations to One-Dimensional Quasi-Neutral Situations 一维准中性条件下的肖克利公式简化
5.5 Majority Carrier Situations 多数载流子
5.5.1 Example 1: Semiconductor bar under voltage 例1：电压下的半导体棒
5.5.2 Example 2: Integrated resistor 例2：集成电阻
5.6 Minority Carrier Situations 少数载流子
5.6.1 Example 3: Diffusion and bulk recombination in a “long” bar 例3：“长”棒中的扩散和体复合
5.6.2 Example 4: Diffusion and surface recombination in a “short” bar 例4：“短”棒中的扩散和表面复合
5.6.3 Length scales of minority carrier situations 少数载流子的长度效应
5.7 Dynamics of Majority Carrier Situations 多数载流子的动力学特性
5.8 Dynamics of Minority Carrier Situations 少数载流子的动力学特性
5.8.1 Example 5: Transient in a bar with S=∞ 例5：S=∞时，半导体棒的瞬态特性
5.9 Transport in Space-Charge and High-Resistivity Regions 空间电荷和高阻区中的输运
5.9.1 Example 6: Drift in a high-resistivity region under external electric field 例6：外电场作用下的高阻区漂移
5.9.2 Comparison between SCR and QNR transport 空间电荷区（SCR）与准中性区（QNR）输运的比较
5.10 Carrier Multiplication and Avalanche Breakdown 载流子倍增和雪崩击穿
5.10.1 Example 7: Carrier multiplication in a high-resistivity region with uniform electric field 例7：均匀电场作用下的高阻区载流子倍增
5.11 Summary 小结
5.12 Further Reading 延展阅读
AT5.1 Continuity Equations in Integral Form 积分形式的连续方程
AT5.2 Dielectric Relaxation 介电弛豫
AT5.3 Advanced Topics Regarding Minority Carrier Situations 少数载流子条件下的复杂难题
AT5.3.1 Advanced Example 1: Diffusion, drift, and recombination in a short bar with internal field 难题示例1：内电场作用下的短棒半导体中的载流子漂移、扩散和复合
AT5.3.2 More on length scales of minority carrier situations 少数载流子条件下的长度效应
AT5.3.3 Advanced Example 2: Transient in a bar with finite surface recombination 难题示例2：有限表面复合下的棒状半导体瞬态特性
AT5.4 Carrier Multiplication and Avalanche Breakdown Under Nonuniform Electric Field 非均匀电场作用下的载流子倍增和雪崩击穿
Problems 习题

6 PN Junction Diode pn结二极管
6.1 The Ideal PN Junction Diode 理想pn结二极管
6.2 Ideal PN Junction in Thermal Equilibrium 热平衡下的理想pn结二极管
6.3 Current?CVoltage Characteristics of the Ideal PN Diode 理想pn结二极管的电流?C电压特性
6.3.1 Electrostatics under bias 偏置电压作用下的静电学特性
6.3.2 I-V characteristics: qualitative discussion I-V 特性：定性讨论
6.3.3 I-V characteristics: quantitative models I-V 特性：定量模型
6.4 Charge?CVoltage Characteristics of Ideal PN Diode 理想pn结二极管的电荷?C电压特性
6.4.1 Depletion charge 耗尽电荷
6.4.2 Minority carrier charge 少数载流子电荷
6.5 Equivalent Circuit Models of the Ideal PN Diode 理想pn结二极管的等效电路模型
6.6 Nonideal and Second-Order Effects 非理想条件和二阶效应
6.6.1 Short diode 短二极管
6.6.2 Space-c