包邮硅加工中的表征

preface to the reissue of the materials characterization series
preface to series
preface to the reissue of characterization in silicon processing
preface
contributors
application of materials characterization techniques to silicon epitaxial growth
  1.1 introduction
  1.2 silicon epitaxial growth
  1.3 film and process characterization
  1.4 selective growth
  1.5 si1_xgex epitaxial growth
  1.6 si1_ xgex material characterization
  1.7 summary
polysilicon conductors
  2.1 introduction
  2.2 deposition
  2.3 doping
  2.4 patterning
  2.5 subsequent processing
silicides
  3.1 introduction
  3.2 formation of silicides
  3.3 the silicide-silicon interface
  3.4 oxidation of silicides
  3.5 dopant redistribution during silicide formation
  3.6 stress in silicides
  3.7 stability of silicides
  3.8 summary
aluminum- and copper-based conductors
  4.1 introduction
  4.2 film deposition
  4.3 film growth
  4.4 encapsulation
  4.5 reliability concerns
tungsten-based conductors
  5.1 applications for ulsi processing
  5.2 deposition principles
  5.3 blanket tungsten deposition
  5.4 selective tungsten deposition
barrier films
  6.1 introduction
  6.2 characteristics of barrier films
  6.3 types of barrier films
  6.4 processing barrier films
  6.5 examples of barrier films
  6.6 summary
appendix: technique summaries
  1 auger electron spectroscopy (aes)
  2 ballistic electron emission microscopy (beem)
  3 capacitance-voltage (c-v) measurements
  4 deep level transient spectroscopy (dlts)
  5 dynamic secondary ion mass spectrometry (dynamic sims)
  6 electron beam induced current (ebic) microscopy
  7 energy-dispersive x-ray spectroscopy (eds)
  8 focused ion beams (fibs)
  9 fourier transform infrared spectroscopy (ftir)
  10 hall effect resistivity measurements
  11 inductively coupled plasma mass spectrometry (icpms)
  12 light microscopy
  13 low-energy electron diffraction (leed)
  14 neutron activation analysis (naa)
  15 optical scatterometry
  16 photoluminescence (pl)
  17 raman spectroscopy
  18 reflection high-energy electron diffraction (rheed)
  19 rutherford backscattering spectrometry (rbs)
  20 scanning electron microscopy (sem)
  21 scanning transmission electron microscopy (stem)
  22 scanning tunneling microscopy and scanning force microscopy (stm and sfm)
  23 sheet resistance and the four point probe
  24 spreading resistance analysis (sra)
  25 static secondary ion mass spectrometry (static sims)
  26 surface roughness: measurement, formation by sputtering, impact on depth profiling
  27 total reflection x-ray fluorescence analysis (txrf)
  28 transmission electron microscopy (tem)
  29 variable-angle spectroscopic ellipsometry (vase)
  30 x-ray diffraction (xrd)
  31 x-ray fluorescence (xrf)
  32 x-ray photoelectron spectroscopy (xps)
index