暂无评论
图文详情
- ISBN:9787560342801
- 装帧:一般胶版纸
- 册数:暂无
- 重量:暂无
- 开本:16开
- 页数:240
- 出版时间:2014-01-01
- 条形码:9787560342801 ; 978-7-5603-4280-1
本书特色
《硅加工中的表征》是材料表征原版系列丛书之一。全书共分六章,内容包括:材料表征技术在硅外延生长中的应用;多晶硅导体;硅化物;铝和铜基导线;级钨基导体;阻隔性薄膜。本书适合作为相关领域的教学、研究、技术人员以及研究生和高年级本科生的参考书。
内容简介
相关领域的教学、研究、技术人员以及研究生和高年级本科生参考书。
目录
preface to the reissue of the materials characterization series
preface to series
preface to the reissue of characterization in silicon processing
preface
contributors
application of materials characterization techniques to silicon epitaxial growth
1.1 introduction
1.2 silicon epitaxial growth
1.3 film and process characterization
1.4 selective growth
1.5 si1_xgex epitaxial growth
1.6 si1_ xgex material characterization
1.7 summary
polysilicon conductors
2.1 introduction
2.2 deposition
2.3 doping
2.4 patterning
2.5 subsequent processing
silicides
3.1 introduction
3.2 formation of silicides
3.3 the silicide-silicon interface
3.4 oxidation of silicides
3.5 dopant redistribution during silicide formation
3.6 stress in silicides
3.7 stability of silicides
3.8 summary
aluminum- and copper-based conductors
4.1 introduction
4.2 film deposition
4.3 film growth
4.4 encapsulation
4.5 reliability concerns
tungsten-based conductors
5.1 applications for ulsi processing
5.2 deposition principles
5.3 blanket tungsten deposition
5.4 selective tungsten deposition
barrier films
6.1 introduction
6.2 characteristics of barrier films
6.3 types of barrier films
6.4 processing barrier films
6.5 examples of barrier films
6.6 summary
appendix: technique summaries
1 auger electron spectroscopy (aes)
2 ballistic electron emission microscopy (beem)
3 capacitance-voltage (c-v) measurements
4 deep level transient spectroscopy (dlts)
5 dynamic secondary ion mass spectrometry (dynamic sims)
6 electron beam induced current (ebic) microscopy
7 energy-dispersive x-ray spectroscopy (eds)
8 focused ion beams (fibs)
9 fourier transform infrared spectroscopy (ftir)
10 hall effect resistivity measurements
11 inductively coupled plasma mass spectrometry (icpms)
12 light microscopy
13 low-energy electron diffraction (leed)
14 neutron activation analysis (naa)
15 optical scatterometry
16 photoluminescence (pl)
17 raman spectroscopy
18 reflection high-energy electron diffraction (rheed)
19 rutherford backscattering spectrometry (rbs)
20 scanning electron microscopy (sem)
21 scanning transmission electron microscopy (stem)
22 scanning tunneling microscopy and scanning force microscopy (stm and sfm)
23 sheet resistance and the four point probe
24 spreading resistance analysis (sra)
25 static secondary ion mass spectrometry (static sims)
26 surface roughness: measurement, formation by sputtering, impact on depth profiling
27 total reflection x-ray fluorescence analysis (txrf)
28 transmission electron microscopy (tem)
29 variable-angle spectroscopic ellipsometry (vase)
30 x-ray diffraction (xrd)
31 x-ray fluorescence (xrf)
32 x-ray photoelectron spectroscopy (xps)
index
preface to series
preface to the reissue of characterization in silicon processing
preface
contributors
application of materials characterization techniques to silicon epitaxial growth
1.1 introduction
1.2 silicon epitaxial growth
1.3 film and process characterization
1.4 selective growth
1.5 si1_xgex epitaxial growth
1.6 si1_ xgex material characterization
1.7 summary
polysilicon conductors
2.1 introduction
2.2 deposition
2.3 doping
2.4 patterning
2.5 subsequent processing
silicides
3.1 introduction
3.2 formation of silicides
3.3 the silicide-silicon interface
3.4 oxidation of silicides
3.5 dopant redistribution during silicide formation
3.6 stress in silicides
3.7 stability of silicides
3.8 summary
aluminum- and copper-based conductors
4.1 introduction
4.2 film deposition
4.3 film growth
4.4 encapsulation
4.5 reliability concerns
tungsten-based conductors
5.1 applications for ulsi processing
5.2 deposition principles
5.3 blanket tungsten deposition
5.4 selective tungsten deposition
barrier films
6.1 introduction
6.2 characteristics of barrier films
6.3 types of barrier films
6.4 processing barrier films
6.5 examples of barrier films
6.6 summary
appendix: technique summaries
1 auger electron spectroscopy (aes)
2 ballistic electron emission microscopy (beem)
3 capacitance-voltage (c-v) measurements
4 deep level transient spectroscopy (dlts)
5 dynamic secondary ion mass spectrometry (dynamic sims)
6 electron beam induced current (ebic) microscopy
7 energy-dispersive x-ray spectroscopy (eds)
8 focused ion beams (fibs)
9 fourier transform infrared spectroscopy (ftir)
10 hall effect resistivity measurements
11 inductively coupled plasma mass spectrometry (icpms)
12 light microscopy
13 low-energy electron diffraction (leed)
14 neutron activation analysis (naa)
15 optical scatterometry
16 photoluminescence (pl)
17 raman spectroscopy
18 reflection high-energy electron diffraction (rheed)
19 rutherford backscattering spectrometry (rbs)
20 scanning electron microscopy (sem)
21 scanning transmission electron microscopy (stem)
22 scanning tunneling microscopy and scanning force microscopy (stm and sfm)
23 sheet resistance and the four point probe
24 spreading resistance analysis (sra)
25 static secondary ion mass spectrometry (static sims)
26 surface roughness: measurement, formation by sputtering, impact on depth profiling
27 total reflection x-ray fluorescence analysis (txrf)
28 transmission electron microscopy (tem)
29 variable-angle spectroscopic ellipsometry (vase)
30 x-ray diffraction (xrd)
31 x-ray fluorescence (xrf)
32 x-ray photoelectron spectroscopy (xps)
index
展开全部
本类五星书
浏览历史
本类畅销
-
黑科技驱动世界的100项技术
¥20.9¥69.8 -
港口文化
¥19.2¥60.0 -
世界桥梁趣谈
¥10.6¥28.0 -
电子操作工必读
¥2.3¥8.0 -
服装制作基本技能
¥4.9¥10.0 -
环境保护辞典
¥14.4¥45.0 -
损伤力学手册
¥271.6¥388.0 -
磷腈阻燃材料(精)
¥118.5¥158.0 -
服装材料的选用与性能分析
¥16.6¥52.0 -
服装结构制图
¥13.3¥39.0 -
消防安全管理技术(第二版)
¥45.8¥58.0 -
电工基础
¥6.2¥14.5 -
煤矿机电设备技术管理
¥32.3¥38.0 -
锁相与频率合成技术
¥10.3¥27.0 -
动力设备拆装(汉英)
¥8.4¥22.0 -
事故管理与应急处置(朱鹏)(第二版)
¥38.3¥45.0 -
水生态文明建设导论
¥24.5¥35.0 -
三坐标智能测量技术与应用
¥34.3¥47.0 -
中国治水文化
¥42.9¥58.0 -
城市路网交通拥挤智能控制理论与方法
¥29.4¥49.0